| Price | Negotiation |
| MOQ | Negotiation |
| Delivery Time | Negotiation |
| Brand | Uchi |
| Place of Origin | Dongguan China |
| Certification | CE / RoHS / ISO9001 / UL |
| Model Number | MBR20200F |
| Packaging Details | Export package / Negotiation |
| Payment Terms | T/T |
| Supply Ability | 2000000 per month |
| Place of Origin | Dongguan China | Applications | Free Wheeling Diodes |
| Packaging Details | Export package / Negotiation | Model Number | MBR20200F |
| Supply Ability | 2000000 per month | Certification | CE / RoHS / ISO9001 / UL |
| Brand Name | Uchi | Payment Terms | T/T |
| Package Type | Through Hole | Max. Forward Voltage | 0.9V, 0.9V |
| Type | Schottky Diode | Price | Negotiation |
| Delivery Time | Negotiation | Minimum Order Quantity | Negotiation |
| Features | Low power loss, high efficiency | Max. Forward Current | 30A, 30A |
Low
Power
Loss
Schottky
Diodes
High
Switching
Frequency
For
Free
Wheeling
Diodes
Schottky diode Schottky diode, also known as Schottky barrier diode (SBD for short), is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes. It is also useful as rectifier diodes and small-signal detector diodes in microwave communication circuits. It is more common in communication power supplies, frequency converters, etc.
A typical application is in the switching circuit of the bipolar transistor BJT, by connecting the Shockley diode to the BJT to clamp, so that the transistor is actually close to the off state when it is in the on state, thereby increasing the switching speed of the transistor. This method is the technique used in the TTL internal circuits of typical digital ICs such as 74LS, 74ALS, 74AS, etc.
The biggest feature of Schottky diodes is that the forward voltage drop VF is relatively small. In the case of the same current, its forward voltage drop is much smaller. Plus it has a short recovery time. It also has some disadvantages: the withstand voltage is relatively low, and the leakage current is slightly larger. It should be considered comprehensively when choosing.
Features
1.
Common
cathode
structure
2.
Low
power
loss,
high
efficiency
3.
High
Operating
Junction Temperature
4. Guard
ring
for
overvoltage protection,High
reliability
5.
RoHS
product
Applications
1. High frequency switch Power supply
2.
Free
wheeling
diodes,
Polarity
protection
applications
MAIN
CHARACTERISTICS
|
IF(AV) |
10(2×5)A |
|
VF(max) |
0.7V (@Tj=125°C) |
|
Tj |
175 °C |
|
VRRM |
100 V |
PRODUCT
MESSAGE
|
Model |
Marking |
Package |
|
MBR10100 |
MBR10100 |
TO-220C |
|
MBRF10100 |
MBRF10100 |
TO-220F |
|
MBR10100S |
MBR10100S |
TO-263 |
|
MBR10100R |
MBR10100R |
TO-252 |
|
MBR10100V |
MBR10100V |
TO-251 |
|
MBR10100C |
MBR10100C |
TO-220 |
ABSOLUTE
RATINGS
(Tc=25°C)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Repetitive peak reverse voltage |
VRRM |
100 |
V |
||
|
Maximum DC blocking voltage |
VDC |
100 |
V |
||
|
Average forward current |
TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode |
IF(AV) |
10 5 |
A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) |
IFSM |
120 |
A |
||
|
Maximum junction temperature |
Tj |
175 |
°C |
||
|
Storage temperature range |
TSTG |
-40~+150 |
°C |
||
