| Price | Negotiable |
| MOQ | 1 |
| Delivery Time | 3-5work days |
| Brand | Hamamatsu |
| Place of Origin | Japan |
| Model Number | S1226-8BQ |
| Packaging Details | In a box |
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 3000/pcs/pre |
| Encapsulated | Metal | Place of Origin | Japan |
| Packaging Details | In a box | Number of pixels | 1 |
| Model Number | S1226-8BQ | Supply Ability | 3000/pcs/pre |
| Brand Name | Hamamatsu | Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Delivery Time | 3-5work days | Price | Negotiable |
| Minimum Order Quantity | 1 | Refrigeration and | Non - cooled |
| Reverse voltage (max) | 5V | photographic area is | 5.8 × 5.8mm |
| encapsulation type is | TO-8 |
Product Description:
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Features:
● High UV sensitivity: QE = 75% (λ=200 nm)
● Suppress NIR sensitivity
● Low dark current
● High reliability
Dark current (maximum) 20 pA
Rise time (typical value). 2 mu s
Junction capacitance (typical value) 1200 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 5V |
| spectral response range is | 190 to 1000 nm |
| peak sensitivity wavelength (typical value) was | 720 nm |
| Type | infrared photoelectricity |
